A Designer’s Guide to Silicon Carbide: Gate Drive Considerations

Learn about the nuances of designing SiC gate drive circuits in this installment of Wolfspeed’s Designer’s Guide to SiC Power

In high-power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts. To maximize those gains you need to drive them effectively. Join the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive Considerations to learn more.



Attendees will learn:

  •  Gate driver selection: Similarities and differences between SiC and Si MOSFET gate drive circuits
  •  Design considerations and how to avoid common pitfalls
  •  Rules of thumb to maximize performance


Date/Time:
Date: Tuesday, August 25, 2020
Time:

  • 9:00am PDT
  • 12:00pm EDT
  • 6:00pm CEST




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