ADL8106ACEZ: GaAs, pHEMT, Low Noise Amplifier, 20 GHz to 54 GHz

The ADL8106ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz.

Key Features and Benefits

  •  Low noise figure of 3.0 dB typical at 30 GHz to 44 GHz
  •  High linearity of 21.5 dBm typical at 30 GHz to 44 GHz
  •  Wide bandwidth in a small form factor

Applications

  •  General Purpose: Wideband, low noise, high linearity, 50Ω match, small package size
  •  Aerospace and Defense
  •  Instrumentation and Measurement
  •  Communications

Evaluation Board

The ADL8106ACEZ can be evaluated with the ADL8106-EVALZ.


See related product

ADL8106ACEZ

Analog Devices RF Amplifiers View

See related product

ADL8106ACEZ-R7

Analog Devices RF Amplifiers View

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