Nexperia, the expert in essential semiconductors, has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount package as well as new silicon germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages that combine the high efficiency of their Schottky counterparts with the thermal stability of fast recovery diodes.
2nd generation (H2) power GaN FETs
Efficient and effective high-power FETs
Extending Nexperia’s GaN footprint with the new GAN041-650WSB, offering performance improvements as well as 80+ titanium grade efficiency, satisfying new EU server power requirements. GaN also addresses applications in industrial and automotive, where power conversion efficiency and power density are critical for market adoption; GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost.
Download GaN FETs Performance,
efficiency, reliability Brochure
Key Features:
• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability
Applications:
• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives
Silicon Germanium (SiGe) rectifiers
Cutting-edge high efficiency, thermal stability and space-savings
Nexperia’s SiGe rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. Targeting automotive, server markets and communications infrastructure, the AEC-Q101 compliant rectifiers are of particular benefit in high-temperature applications. These extremely low leakage devices allow an extended safe-operating area with no thermal runaway up to 175 °C. And, at the same time, offer significant room to optimize your design towards higher efficiency. 
Download SiGe
Rectifiers Leaflet
Key Features
• VR of 120 V, 150 V, 200 V
• IR of 1, 2, 3 A
• Low forward voltage and low Qrr
• Extremely low leakage current of < 1nA
• Thermal stability up to 175 °C Tj
• Fast and smooth switching
• Low parasitic capacitance
• AEC-Q101 qualified
• Space-saving, rugged CFP packaging
Benefits
• Excellent efficiency
• Extented safe operating area
Applications
• Automotive, e.g. LED Lighting, Engine control units
• Communications infrastructure
• Server Power