Infineon Technologies AG RF MOSFET
| 部品番号 | 価格 | ストック | メーカー | カテゴリ | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Gate Source Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain Source Resistance - (mOhm) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PTVA101K02EVV1XWSA1 Trans RF MOSFET N-CH 105V 5-Pin Case 36275 Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| PTFB212503ELV1XWSA1 Trans RF MOSFET N-CH 65V 7-Pin Case 36248 Tray |
|
Infineon Technologies AG | RF FET | 5A991 | No | ||||||||||||||||||||||||||||||
| PTFA180701FV4FWSA1 Trans RF MOSFET N-CH 65V 3-Pin Case 37265 Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
PTFB210801FAV1XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 37265 Tray
|
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| PTVA120501EAV1XWSA1 Trans RF MOSFET N-CH 105V Tray |
|
Infineon Technologies AG | RF FET | Single | Enhancement | N | 1 | Pulsed RF | 105 | 12 | 400(Typ)@10V | 17 | 1200 | 1400 | LDMOS | Tray | EAR99 | No | |||||||||||||||||
PTFB181702FCV1XWSA1
Trans RF MOSFET N-CH 65V 5-Pin Case H-37248 Tray
|
|
Infineon Technologies AG | RF FET | Dual Common Source | Enhancement | N | 2 | 2-Carrier W-CDMA | 65 | 3.5 | 110(Typ)@10V | 180 | 19 | 1805 | 1880 | LDMOS | Tray | 5A991g. | No | ||||||||||||||||
| PTFA211801EV5XWSA1 Trans RF MOSFET N-CH 65V 3-Pin Case 36260 Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| PTFC262808FVV1XWSA1 Trans RF MOSFET N-CH 65V Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| PTFB193404FV1XWSA1 Trans RF MOSFET N-CH 65V 7-Pin Case 37275 Tray |
|
Infineon Technologies AG | RF FET | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone | 65 | 10 | 50(Typ)@10V | 100 | 19 | 1930 | 1990 | LDMOS | Tray | EAR99 | No | ||||||||||||||||
PTFA212001EV4XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 Tray
|
|
Infineon Technologies AG | RF FET | Single | Enhancement | N | 1 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 50(Typ)@10V | 625000 | 220 | 15.9 | 2110 | 2170 | LDMOS | Tray | EAR99 | No | |||||||||||||||
PTFA091503ELV4R250XTMA1
Trans RF MOSFET N-CH 65V 7-Pin Case 36248 T/R
|
|
Infineon Technologies AG | RF FET | Enhancement | N | 2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 70(Typ)@10V | 150 | 17 | 920 | 960 | LDMOS | Tape and Reel | EAR99 | No | ||||||||||||||||||
| PXAC192908FVV1XWSA1 Trans RF MOSFET 65V Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| BF1009SE6327HTSA1 Trans RF MOSFET N-CH 12V 0.025A Automotive 4-Pin SOT-143 |
|
Infineon Technologies AG | RF FET | EAR99 | No | No | |||||||||||||||||||||||||||||
| BF5020WH6327XTSA1 Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-343 T/R |
|
Infineon Technologies AG | RF FET | EAR99 | No | No | |||||||||||||||||||||||||||||
| PTFA180701EV4XWSA1 Trans RF MOSFET N-CH 65V 3-Pin Case 36265 Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| PTFB213208FVV1XWSA1 Trans RF MOSFET N-CH 65V 7-Pin Case H-34275G-6/2 Tray |
|
Infineon Technologies AG | RF FET | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 10 | 50(Typ)@10V | 343 | 17 | 2110 | 2170 | LDMOS | Tray | EAR99 | No | ||||||||||||||||
| PTFB183404EV1XWSA1 Trans RF MOSFET N-CH 65V 9-Pin Case 36275 Tray |
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
| PTFA041501EV4XWSA1 Trans RF MOSFET N-CH 65V 3-Pin Case 36248 Tray |
|
Infineon Technologies AG | RF FET | Single | Enhancement | N | 1 | 1-Carrier CDMA IS-95|2-Tone | 65 | 12 | 70(Typ)@10V | 60 | 21 | 420 | 500 | LDMOS | Tray | 5A991 | No | ||||||||||||||||
PTFA072401FLV5XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 34288 Tray
|
|
Infineon Technologies AG | RF FET | EAR99 | No | ||||||||||||||||||||||||||||||
PTVA120121MV1R1KXUMA1
Thermally-Enhanced High Power RF LDMOS FET
|
|
Infineon Technologies AG | RF FET | 10 | SON EP | No | No | No | No | No | |||||||||||||||||||||||||
| PTVA127002EVV1R0XTMA1 Trans RF MOSFET N-CH 105V 5-Pin Case 36275 T/R |
|
Infineon Technologies AG | RF FET | Dual Common Source | Enhancement | N | 2 | Pulsed RF | 105 | 12 | 100(Typ)@10V | 703(Typ) | 16 | 1200 | 1400 | Tape and Reel | 5 | Case 36275 | No | No | No | No |