Infineon’s SJ-FET-based solid-state relays for your AC applications offer faster switching, higher reliability, lower power dissipation, and cost-effectiveness. Featuring Infineon’s CoolMOS™ S7 SJ MOSFET technology they will make you benefit from an unprecedentedly low RDS(on) x A figure of merit.
From EMRs to highly efficient SSRs
Mature and well-established - Electromechanical relays (EMR) have certain inherent weaknesses. The major weakness is contact degradation caused by arcing during contact opening and closing. The noise caused by the metal contacts' movement is undesirable in certain applications. Also, the increasing contact resistance over time makes their behavior less predictable. Especially in high-performance applications with increased reliance on system availability and reliability, EMRs are increasingly being replaced by SSR solutions.
Today’s alternatives to EMRs in AC applications are solid-state relays (SSR) based on TRIACs - silicon-controlled rectifiers (SCRs) or IGBT - or planar-MOSFET based SSR-solutions. These SSR solutions have their limitations. Compared to EMRs they suffer from limited controllability, limited maximum output current and their high-power dissipation of 1 W/A or more require thermal handling via heatsink, making them a less power dense and more expensive solution in high power applications.
FET-based solid-state relays can overcome the limitations of today’s TRIACs or SCRs. They enable an SSR solution with highest reliability, increased power density, advanced control and protection methods. However, today’s standard FET technologies come with a high RDS(on) x A Figure-of-Merit in the range of 2-3 Ωmm² , which leads to a large chip and thus they are significantly more expensive than TRIACs or SCRs.
Why Superjunction (SJ)-FET based SSR solutions?
New generations of SSR are possible thanks to Infineon’s CoolMOS™ S7 Superjunction MOSFET technology. The CoolMOS™ S7 family – optimized for static switching applications - is the ideal SJ MOSFET for use in solid-state relay applications. Implementing an SSR with CoolMOS™ S7 offers the same advantages as conventional FET SSRs, as mentioned above, but with a significant improvement in cost performance:
The latest CoolMOS™ S7 technology offers an unprecedentedly low RDS(on) x A Figure-of-Merit of 0.6 Ωmm² meeting the needs of next generation smart miniature solid state relay solutions for mid voltage 200V-500V applications.
From electromechanical relays (EMR) to robust semiconductor solutions: Solid-State Relays (SSR) with optimized superjunction FET Technology.
Key features & benefits of SJ-FET based SSR solutions
- Operational lifetime: tens of millions of operations
- → Maintenance free (no degradation of contacts), MRO cost savings
- No mechanical parts
- → Arcing-free operation, no contact bounce, clicking noise is eliminated
- Significantly faster switching
- → Advanced control and protection methods
- No increasing resistance over lifetime
- → Stable performance, predictable behavior
- Lowest RDS(on) x A in class
- → Highest power density, minimized cooling effort, parallelization and scalability
Recommended Applications for SJ-FET based SSR solutions
- In rush solid state relay in SMPS
- DC circuit protection in telecom systems, ships, avionics, solar systems
- Battery main switch in EV
- Battery protection in energy storage
- PLC and other industrial automation
- AC SSR in wall switch for smart housing
- DC solid state relay
From legacy EMR to next generation SJ-FET SSR.

Comparison of EMR, SSR and SJ-FET based SSR
Feature | Electromechanical Relay (EMR) | Solid State Relays (SSR) | CoolMos™ S76 SJ-FET based SSR |
|||
---|---|---|---|---|---|---|
Long Life | ✕ |
|
✓ |
|
✓ |
|
Size & Weight | ✕ |
|
✓ |
|
✓ |
|
Quiet Operation | ✕ |
|
✓ |
|
✓ |
|
Harsh conditions | ✕ |
|
✓ |
|
✓ |
|
Position Insensitive | ✕ |
|
✓ |
|
✓ |
|
Responsiveness | ✕ |
|
✓ |
|
✓ |
|
CAPEX cost | ✓ |
|
✕ |
|
✓ |
|
OPEX cost | ✕ |
|
✓ |
|
✓ |
|
Efficiency & Power Consumption | ✕ |
|
✕ |
|
✓ |
|
EMI | ✕ |
|
✓ |
|
✓ |
|
Magnetic Noise Immunity | ✕ |
|
✓ |
|
✓ |
|
Galvanic isolation | ✓ |
|
✓ |
|
✓ |
|
AC switch | ✓ | Yes | ✓ |
|
✓ |
|
DC switch | ✓ | Yes | ✓ |
|
✓ |
|
Compatibility with Control Systems | ✕ | Yes | ✓ |
|
✓ |
|
Application Diagram
Choose from our granular CoolMOS™ S7 portfolio
Download Product Selection Guide: Experience the difference in power: CoolMOS™ - CoolSiC™ - CoolGaN™
RDS(on,max) [mΩ] | TO-220 | TOLL | QDPAK TSC | QDPAK BSC |
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10 | IPDQ60R010S7 | IPQC60R010S7 | ||
17 | IPDQ60R017S7 | IPQC60R017S7 | ||
22 | IPP60R022S7 | IPT60R022S7 | IPDQ60R022S7 | |
40 | IPP60R040S7 | IPT60R040S7 | IPDQ60R040S7 | IPQC60R040S7 |
65 | IPP60R065S7 | IPT60R065S7 | IPDQ60R065S7 | |
Package Guidance | Industry standard package | Compact, high power SMD package | Highest performance SMD package with novel top-side cooling | Highest performance SMD package with standard bottom-side cooling |
CoolMOS™ S7 SJ MOSFET Features and Benefits
Features | Benefits |
---|---|
Optimized superjunction (SJ) technology with best-in-class RDS(on) x A in powerful SMD packages | Eliminated or reduced heat sink of 40%* in volume |
Optimized for conduction performance, similar to EMR | More compact and easier designs with 95.4%* reduced PCB space |
Improved thermal resistance | High flexibility in design for mounting in vertical or horizontal positions |
High pulse current capability | Resistant to shock and vibration |
Body diode robustness at AC line commutation | Lower losses and high-power density allow for easy fit into standard form factors |
Lower footprint*, equivalent to EMR | The higher efficiency lowers total cost of ownership (TCO)* |
Advanced control & feature set | SJ-FET based solution enable embedded control and protection for overall system size reduction and higher system reliability and longer lifetime lowering maintenance costs |
Low power dissipation | Suitable for AC and DC switching |
Scalability to user needs | |
Same size and packaging density as EMR | |
Galvanic isolation via hybrid solution (SSR + electromechanical relay) for faster response |
Complementary gate driver ICs
Download Product Selection Guide: Infineon EiceDRIVER™ gate driver ICs - Selection guide 2022
Product family | Output voltage | Output current [typ.] | Isolation type | Package | Part Number | |
---|---|---|---|---|---|---|
EiceDRIVER™ | 1EDB | 20V | 5.4/9.8 A | Functional/basic isolation | DSO-8 | 1EDB6275F |
1EDB8275F | ||||||
1EDB9275F | ||||||
1EDN TDI | 20V | 4/8 A | Non-isolated | SOT-23-6 | 1EDN6550B | |
1EDN8550B | ||||||
1EDN9550B | ||||||
1EDN | 20V | 4/8 A | Non-isolated | SOT-23-6 | 1EDN8511B | |
1EDI | 20V | ±2 to ±6 A | Functional isolation | DSO-8 | 1EDI10I12MF | |
1EDI20I12MF | ||||||
1EDI30I12MF | ||||||
1ED | 25V | ±2.6 A | non-isolated | SOT-23-6 | 1ED44173N01B | |
40V | ±3 to ± 6A | Functional isolation | DSO-16 | 1ED3431MU12M | ||
1ED3461MU12M | ||||||
40V | ±3 to ± 6A | Reinforced isolation | 1ED3431MC12M | |||
1ED3461MC12M |
Complementing Gate Driver ICs - Additional Info
Complementing Photovoltaic Isolators