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Silicon carbide technology with higher efficiency and advantages
Silicon carbide (SiC) technology has more advantages than traditional silicon (Si), insulated-gate bipolar transistor (IGBTs), and other technologies, including higher switching frequencies, lower operating temperatures, higher current and voltage capacities, and lower losses, which lead to increased power density, reliability, and efficiency. This article will introduce the development trend of SiC and its application in energy storage systems (ESS), as well as the SiC power solutions launched by Wolfspeed.
Optimizing drive-cycle simulations for automotive applications
Silicon Carbide (SiC) has transformed power delivery and management in a number of industries, especially electric vehicle (EV) charging and on-board power conversion. This is due to its superior thermal characteristics, low losses, and power density, which result in higher efficiency and reliability when compared to more traditional technologies such as silicon (Si) insulated-gate bipolar transistors (IGBTs). To get maximum system efficiency and predict performance accurately, it’s important to fully simulate and characterize the topologies, systems, and applications that use these SiC components.