New Quazar Family from MoSys Part 1 of 2

Explore the architectural features of the Quazar family of products from MoSys in this Part 1 introduction by Mark Baumann, Director or Product Definition & Applications at MoSys, Inc.

In Part I of this blog, we will be exploring the architectural features of the newly announced Quazar family of products from MoSys. The Quazar family are groups of parts that are designed to address the needs for the next generation of Synchronous SRAM devices on the market. Quad Data Rate (QDR) devices currently have the largest share of this market.

As MoSys approached this issue, it was realized that there are some features and goals to address with the present QDR devices. In reviewing the present QDR devices that are on the market, the issues were:

  • •  Density of 144Mb with one offering at 288Mb
  • •  Use of wide parallel busses that run at very high frequency
  • •  Strict rules to layout boards to accept these fast-wide busses
  • •  Sourced by multiple vendors (Cypress (Infineon) and GSI) but each vendor uses a slightly different pinout
  • •  No commitment to a future roadmap

In seeking to ensure that the new MoSys device addresses each of these issues the goals set out were:

  • •  Develop a device that is at least 576Mb in density
  • •  Use a bus structure that is available today and has a growth path to future speed and bandwidth (Since SerDes are becoming more ubiquitous on FPGAs, ASICs and ASSPs are considered a strong option)
  • •  Source – work on a guaranteed source of supply (continuity of supply agreement)

The design approach that MoSys is presenting, we believe, is a significant improvement over a standard QDR device. MoSys has architected a device that is 4 to 8 times the density of a QDR device and achieves this with comparable system latency and 2 to 5 times the system access bandwidth.


Body Image 1-MoSys New Quazar Family Part 1


If you examine the MoSys Quazar family of devices, you will see that at many levels the architecture has been developed to support a list of feature goals. These being:

  • •  Cell design
  • •  Bank architecture
  • •  Partition architecture
  • •  Quad Partition structure
  • •  Internal Bus structure
  • •  Internal clocking and Trc

In Part 2, we’ll explore how each of these features support the goal of providing a next generation QDR replacement.


More from MoSys



관련 상품 참조

MSQ220AJC288-10

MoSys, Inc SRAM Chip 보기

관련 상품 참조

MSQ220AJC288-12

MoSys, Inc SRAM Chip 보기

관련 상품 참조

MSQ230AGE-1512

MoSys, Inc SRAM Chip 보기

 

 

최신 뉴스

Sorry, your filter selection returned no results.

개인정보 보호정책이 업데이트되었습니다. 잠시 시간을 내어 변경사항을 검토하시기 바랍니다. 동의를 클릭하면 Arrow Electronics 개인정보 보호정책 및 이용 조건에 동의하는 것입니다.

당사의 웹사이트에서는 사용자의 경험 향상과 사이트 개선을 위해 사용자의 기기에 쿠키를 저장합니다. 당사에서 사용하는 쿠키 및 쿠키 비활성화 방법에 대해 자세히 알아보십시오. 쿠키와 추적 기술은 마케팅 목적으로 사용될 수 있습니다. '동의'를 클릭하면 기기에 쿠키를 배치하고 추적 기술을 사용하는 데 동의하는 것입니다. 쿠키 및 추적 기술을 해제하는 방법에 대한 자세한 내용과 지침을 알아보려면 아래의 '자세히 알아보기'를 클릭하십시오. 쿠키 및 추적 기술 수락은 사용자의 자발적 선택이지만, 웹사이트가 제대로 작동하지 않을 수 있으며 사용자와 관련이 적은 광고가 표시될 수 있습니다. Arrow는 사용자의 개인정보를 존중합니다. 여기에서 당사의 개인정보 보호정책을 읽을 수 있습니다.