3V, +14 dBm, 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier Using the BFP640 SiGe Transistor

使用 Infineon Technologies AG 的 BFP640 的参考设计

放大
Image 1 / 1

供应商

Infineon Technologies AG
  • 应用类别
    无线通信
  • 产品类别
    射频放大器

依据最终产品

  • Wireless

说明

  • 3V, +14 dBm, 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier Using the BFP640 SiGe Transistor. Silicon-Germanium BFP640 SiGe Low Noise Transistor is shown in an SDARS active antenna LNA application. The BFP640 is targeted for the 2nd stage in a 3 stage SIRIUS LNA chain

主要特色

  • Operating Frequency
    2320 to 2345 MHz
  • Output Power
    14 dBm
  • Gain
    16.9 dB

Featured Parts (2)

Featured Parts
零件编号 供应商 类别 说明
BFP 640 H6327 Infineon Technologies AG RF BJT Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R 买入
BFP640H6327XTSA1 Infineon Technologies AG RF BJT Trans RF BJT NPN 4.1V 0.05A 200mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101 买入

Research and Events

Power the future with Silicon Carbide Technology

Join us for this one-day seminar, focused on Silicon Carbide Technology, which provides the needed flexibility for future Industrial and Automotive Power designs. Your designs will become smaller and more efficient with reduced costs.

Use logical and physical implementation to improve security and time-to-market

Industry 4.0, Smart Home, Home Healthcare, and Wearables are driving IoT device connectivity on a vastly large scale.

Securely developing, manufacturing & deploying IoT devices from one to a million

Sorry, your filter selection returned no results.

与电子元件连接

Facebook LinkedIn Instagram YouTube
联系我们

联系与支持

项目和合作伙伴

新产品

产品类别

制造商

垂直领域与趋势

请仔细阅读我们近期更改的隐私政策。当按下确认键时，您已了解并同意艾睿电子的隐私政策和用户协议。

请参阅短策略

本网站需使用cookies以改善用户您的体验并进一步改进我们的网站。此处阅读了解关于网站cookies的使用以及如何禁用cookies。网页cookies和追踪功能或許用于市场分析。当您按下同意按钮，您已经了解并同意在您的设备上接受cookies，并给予网站追踪权限。更多关于如何取消网站cookies及追踪的信息，请点击下方“阅读更多”。尽管同意启用cookies追踪与否取决用户意愿，取消网页cookies及追踪可能导致网站运作或显示异常，亦或导致相关推荐广告减少。

我们尊重您的隐私。请在此阅读我们的隐私政策。