State-of-the-art SiC-trench MOSFETs for lowest losses and highest reliability
Infineon's CoolSiC™ MOSFET is a revolutionary technology that provides unmatched reliability and performance. The unique combination of a high threshold voltage (VGS(th),typ=4.5 V) with a low QGD/QTH ratio guarantees robustness to parasitic turn-on in hard switching topologies. Moreover, enables unipolar gate driving which results in cost reduction at system level (e.g. bootstrapping) and PCB footprint reduction (higher power density).
At the same time, the low Qoss helps reducing commutation times and the inductance value required to guarantee zero voltage switching (ZVS) in soft switching topologies (e.g. DAB, PSFB). Consequently higher switching frequency can be achieved.
In addition, Infineon capacity and supply chain strategy is capable of addressing the fast-growing demand of Silicon Carbide MOSFETs.
Features
- Unique compination of low Crss/Ciss and high VGS(th)
- Commutation robust fast body diode with low recovery
- Superior gate oxide reliability
- Compatible with standard drivers
- Compatible with unipolar driving
Benefits
- Suitable for hard switching and soft switching topologies.
- Higher robustness and system reliability
- Reduction system size leading to higher power density
- Ease of design and implementation
Highest gate oxide reliability
Infineon's CoolSiC™ MOSFETs' gate oxide reliability is setting a benchmark in the industry. Our advanced SiC technology and rigorous testing procedures ensure that our MOSFETs have the highest quality gate oxides. This results in lower failure rates during their lifetime, and no early failures for our customers.
How Infineon controls and assures the reliability of SiC based power semiconductors
Integrated body diode
Infineon's CoolSiC™ MOSFETs have an integrated body diode which is highly robust and especially design for application which a continuous hard commutation on conductive body diode. With this feature, no additional SiC Schottky diode is needed in hard switching topologies like the totem pole. The trench bottom embedded into a p+ region enhances the body diode area.
Discover CoolSiC™ MOSFET 650V portfolio
| RDS(on)max [mO] 18 V |
RDS(on)typ [mO] 18 V |
TO-247-4 |
TO-247-3 |
D2PAK-7 |
|---|---|---|---|---|
| 346 | 260 | IMBG65R260M1H | ||
| 217 | 163 | IMBG65R163M1H | ||
| 141 | 107 | IMZA65R107M1H | IMW65R107M1H | IMBG65R107M1H |
| 111 | 83 | IMZA65R083M1H | IMW65R083M1H | IMBG65R083M1H |
| 94 | 72 | IMZA65R072M1H | IMW65R072M1H | IMBG65R072M1H |
| 74 | 57 | IMZA65R057M1H | IMW65R057M1H | IMBG65R057M1H |
| 64 | 48 | IMZA65R048M1H | IMW65R048M1H | IMBG65R048M1H |
| 50 | 39 | IMZA65R039M1H | IMW65R039M1H | IMBG65R039M1H |
| 42 | 30 | IMZA65R030M1H | IMW65R030M1H | IMBG65R030M1H |
| 34 | 27 | IMZA65R027M1H | IMW65R027M1H | |
| 30 | 22 | IMBG65R022M1H |
Gate Driver ICs for CoolSiC™ MOSFETs 650V
Infineon’s EiceDRIVER™ gate-driver ICs are the perfect choice for driving SiC MOSFETs, especially Infineon’s ultra-fast switching CoolSiC™ MOSFETs.
These gate drivers incorporate all of the important key features and parameters for driving SiC, such as:
- tight propagation delay matching
- precise input filters
- wide output-side supply range
- negative gate voltage capability
- active Miller clamp
- DESAT protection
- extended CMTI capability
Recommended gate driver ICs
| Family | Product | Package | Input-to-output isolation | UVLO typ ON / OFF * |
Output peak source / sink current1 |
CMTI (min.) |
Propagation delay (typ.) |
Propagation delay accuracy |
|
|---|---|---|---|---|---|---|---|---|---|
| Type | Rating | ||||||||
| 1EDB | 1EDB9275F | DSO-8 150mil |
Single Protection |
VISO = 3 kVrms | 14.9 V / 14.4 V | 5 A / -9 A (VDDO=15V, Tamb=25ºC) |
300 V/ns | 45 ns | -4 ns / +6 ns |
| 1EDB6275F | 12.2 V / 11.5 V | ||||||||
| 1EDN-TDI | 1EDN9550B | SOT-23 6-pin |
Non-isolated | CMR: ≤ ±200 VDC |
14.9 V / 14.4 V | n.a. | 45 ns | -7 ns / +10 ns | |
| 1EDN6550B | 12.2 V / 11.5 V | ||||||||
| 2EDi | 2EDB9259Y | DSO-14 150mil 3.3mm ch-to-ch |
Single Protection |
VISO = 3 kVrms (UL 1577) |
14.9 V / 14.4 V | 150 V/ns | 38 ns | -5 ns / +9 ns | |
| 2EDR9259X | DSO-14 300mil 3.3mm ch-to-ch |
Reinforced isolation |
VIOTM = 8 kVpk (VDE 0884-10) VISO = 5.7 kVrms (UL 1577) |
||||||
| 2EDR9258X | |||||||||
| 2EDR6258X | 12.2 V / 11.5 V | ||||||||
* 14.9 V UVLO parts recommended for 18 V driving; 12.2 V UVLO parts recommended for 15 V driving
1-channel
SOT-23 6-pin
1EDNx550B
1-channel
DSO-8 150mil
1EDBx275F
2-channel
DSO-14 150mil
2EDB9259Y
2-channel
DSO-14 300mil
2EDRx25xX
How to drive SiC MOSFETs reliably?
Get expert advice on how to drive SiC MOSFETs reliably.
How easy is it to drive a CoolSiC™ MOSFET?
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
Application example - Totem-pole PFC and LLC of Server SMPS
Evaluation boards for CoolSiC™ MOSFETs and EiceDRIVER™ ICs
Choose from Infineon’s evaluation boards below and start your SiC design feat. CoolSiC™ MOSFETs and EiceDRVER™ ICs
| EVAL_3KW_50V_PSU | |
|---|---|
 |
The EVAL_3KW_50V_PSU is a cutting-edge Infineon system solution for a 3 kW power supply unit (PSU) which meets the OCP V3 rectifier specifications for servers and data centers. |
| KIT_1EDB_AUX_SIC | |
|---|---|
 |
The KIT_1EDB_AUX_SiC is the perfect driving solution for SiC MOSFETs. The isolated auxiliary supply can support unipolar and bipolar driving, making it easy to configure typical voltage levels for SiC by using few resistors. |
| EVAL_3K3W_TP_PFC_SIC | |
|---|---|
 |
The EVAL_3K3W_TP_PFC_SIC evaluation board is a system solution for a state-of-the-art bridgeless totem-pole power factor corrector (PFC) with bidirectional power capability. It is intended for applications that require high efficiency (≈99%) and high power density (72W/in³) such as high-end server and telecom. The bidirectional power flow capability makes it ideal for battery chargers or battery formation applications. |