BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application

Reference Design using part BFP740F by Infineon Technologies AG

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Manufacturer

Infineon Technologies AG
  • Application Category
    Wireless Communication
  • Product Type
    RF Amplifier

For End Products

  • PoE Wireless Access Point
  • Wireless LAN

Description

  • BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application. The BFP740F is a high gain, ultra low noise Silicon-Germanium-Carbon (SiGe:C) HBT device suitable for a wide range of Low Noise Amplifier (LNA) applications

Key Features

  • Operating Frequency
    5000 to 6000 MHz
  • Output Power
    22.1 dBm
  • Gain
    16.4 dB

Featured Parts (2)

Featured Parts
Part Number Manufacturer Type Description
BFP 740F H6327 Infineon Technologies AG RF BJT Trans RF BJT NPN 4V 0.045A 160mW 4-Pin TSFP T/R Automotive AEC-Q101 Buy
BFP740FH6327XTSA1 Infineon Technologies AG RF BJT Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin TSFP T/R Buy

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