BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application

Infineon Technologies AG の部品 BFP740F を使用したリファレンス デザイン

メーカー

Infineon Technologies AG
  • アプリケーションカテゴリ
    無線通信
  • 製品タイプ
    RFアンプ

最終製品向け

  • PoE Wireless Access Point
  • Wireless LAN

説明

  • BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application. The BFP740F is a high gain, ultra low noise Silicon-Germanium-Carbon (SiGe:C) HBT device suitable for a wide range of Low Noise Amplifier (LNA) applications

主な特徴

  • Operating Frequency
    5000 to 6000 MHz
  • Output Power
    22.1 dBm
  • Gain
    16.4 dB

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