This paper describes the benefits of gallium nitride on silicon (GaN-on-Si) technology in power designs. Key differences between silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies are discussed as well as the features and benefits of Infineon’s CoolGaN™ HEMTs.
Power semiconductors have historically been based on a silicon substrate, however, while silicon is an excellent general-purpose semiconductor, it has well documented limitations when it comes to high voltages. As the demand for more power continues unabated, the industry at large is moving away from silicon in favor of semiconductor materials that feature characteristics more suitable to power. These materials are classified as wide bandgap, which refers to the fact that they are physically different at the crystalline level to materials like silicon. These differences translate into several important characteristics, one of which is their ability to operate at higher switching frequencies while keeping the losses to a very low, manageable level.
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