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| Nº de referencia | Precio | Existencias | Fabricante | Categoría | Descripción | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Junction Case Thermal Resistance | Category | Configuration | Maximum DC Collector Current Range - (A) | Maximum Base Emitter Saturation Voltage - (V) | Number of Elements per Chip | Operating Junction Temperature - (°C) | Maximum Emitter Base Voltage - (V) | Supplier Package | Maximum Junction Ambient Thermal Resistance | Typical Input Capacitance - (pF) | Package Family Name | Maximum Turn-On Time - (ns) | Maximum Power Dissipation - (mW) | Maximum Turn-Off Time - (ns) | Maximum Emitter Cut-Off Current - (nA) | Maximum Collector Base Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Operating Temperature - (°C) | Material | Minimum Operating Temperature - (°C) | ROHS | Maximum DC Collector Current - (A) | Pin Count | Maximum Collector Cut-Off Current - (nA) | Maximum Rise Time - (ns) | Life Cycle | Maximum 3rd Order Intercept Point - (dBm) | Minimum DC Current Gain | Minimum DC Current Gain Range | Type | Maximum Noise Figure - (dB) | Maximum Collector-Emitter Voltage - (V) | Typical Output Capacitance - (pF) | Maximum Collector-Emitter Voltage Range - (V) | Maximum Transition Frequency - (MHz) | Packaging | Typical Power Gain - (dB) | Output Power - (W) | Operational Bias Conditions |
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Semicoa Semiconductors | GP BJT | Trans GP BJT NPN 12V | |||||||||||||||||||||||||||||||||||||||||
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2S3960
Trans GP BJT NPN 12V
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Semicoa Semiconductors | GP BJT | Trans GP BJT NPN 12V |