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| Nº de referencia | Precio | Existencias | Fabricante | Categoría | Descripción | Maximum Power Dissipation - (W) | Configuration | Maximum Operating Temperature - (°C) | Number of Elements per Chip | Typical Collector Emitter Saturation Voltage - (V) | Maximum Continuous Collector Current Range - (A) | Minimum Operating Temperature - (°C) | Maximum Continuous Collector Current - (A) | ROHS | Pin Count | Supplier Package | Tradename | Life Cycle | Maximum Gate Emitter Leakage Current - (uA) | Maximum Collector-Emitter Voltage - (V) | Technology | Typical Output Capacitance - (pF) | Channel Type | Maximum Transition Frequency - (MHz) | Packaging | Typical Input Capacitance - (pF) | Maximum Gate Emitter Voltage - (V) | Package Family Name |
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Varios
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Toshiba | Chip IGBT | Varios | Varios | Varios | Varios | Varios | Varios | Varios | Varios | Varios | Varios | ||||||||||||||
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S6X06B(ANSD)
TOSHIBA SILICON N-CHANNEL IEGT
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Toshiba | Chip IGBT | TOSHIBA SILICON N-CHANNEL IEGT | ||||||||||||||||||||||||
| S6X06(B,ANSD,Q) Trans IGBT Chip N-CH 4500V 5000W |
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Toshiba | Chip IGBT | Trans IGBT Chip N-CH 4500V 5000W | 5000 | Single Dual Emitter | 4 | Yes | Unconfirmed | 0.05 | 4500 | N | ±20 | |||||||||||||||
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S6X06
Trans IGBT Chip N-CH 4500V 5000W
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Toshiba | Chip IGBT | Trans IGBT Chip N-CH 4500V 5000W |