BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application
Infineon Technologies AG이 부품 BFP740 을 사용하는 참조 설계
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최종 제품의 경우
- PoE Wireless Access Point
- Wireless LAN
Description
- BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure and 100 nanosecond Turn-On/Turn-Off Time
최종 제품의 경우
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Operating Frequency5000 to 6000 MHz
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Output Power24.4 dBm
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Gain15.2 dB
피쳐링 부품 (2)
부품 번호 | Manufacturer | Type | Description | |||
---|---|---|---|---|---|---|
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BFP740H6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 구매 | |
|
BFP740H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101 | 구매 |