BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application
使用 Infineon Technologies AG 的 BFP740 的参考设计
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依据最终产品
- PoE Wireless Access Point
- Wireless LAN
说明
- BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 to 6GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure and 100 nanosecond Turn-On/Turn-Off Time
主要特色
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Operating Frequency5000 to 6000 MHz
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Output Power24.4 dBm
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Gain15.2 dB
Featured Parts (2)
| 零件编号 | 供应商 | 类别 | 说明 | |||
|---|---|---|---|---|---|---|
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BFP740H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101 | 买入 | |
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BFP740H6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 买入 | |