Bourns® Insulated Gate Bipolar Transistor (IGBT) Discrete Solution Model BID Series

11 Jan 2023

By combining technology from a MOSFET gate and a bipolar transistor, the Bourns® IGBT Discrete BID Series creates a component designed for high voltage and high current applications.

This device uses advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, which in turn results in a lower Collector-Emitter Saturation Voltage (VCE (sat)) and fewer switching losses. In addition, due to the thermally efficient TO-252, TO-247 and TO-247N packages, the devices can provide a lower thermal resistance Rth(j-c), making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

VIEW BID SERIES – FEATURES & APPLICATIONS (PDF)

BIDD05N60T

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Applications

1 / 3
Lightning
2 / 3
Power Supply
3 / 3
Solar Battery
Management System

 

See related product

BIDW50N65T

BIDW50N65T

Bourns IGBT Chip View

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BIDNW30N60H3

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See related product

BIDW20N60T

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Bourns IGBT Chip View

See related product

BIDW30N60T

BIDW30N60T

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See related product

BIDD05N60T

BIDD05N60T

Bourns IGBT Chip View

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