Low Cost, 3V, +12.5 dBm, 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier Using the BFP640 SiGe Transistor
使用 Infineon Technologies AG 的 BFP640 的参考设计
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依据最终产品
- Wireless
- Wireless LAN
说明
- Low Cost, 3V, +12.5 dBm, 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier Using the BFP640 SiGe Transistor. The Silicon-Germanium BFP640 SiGe Low Noise Transistor is shown in an SDARS active antenna LNA application
主要特色
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Operating Frequency2320 to 2345 MHz
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Output Power28 dBm
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Gain18 dB
Featured Parts (2)
零件编号 | 供应商 | 类别 | 说明 | |||
---|---|---|---|---|---|---|
|
BFP 640 H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 买入 | |
|
BFP640H6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4.1V 0.05A 200mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101 | 买入 |