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| N° de référence | Prix | Stock | Fabricant | Catégorie | Description | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Junction Case Thermal Resistance | Category | Configuration | Maximum DC Collector Current Range - (A) | Maximum Base Emitter Saturation Voltage - (V) | Number of Elements per Chip | Operating Junction Temperature - (°C) | Maximum Emitter Base Voltage - (V) | Supplier Package | Maximum Junction Ambient Thermal Resistance | Typical Input Capacitance - (pF) | Package Family Name | Maximum Turn-On Time - (ns) | Maximum Power Dissipation - (mW) | Maximum Turn-Off Time - (ns) | Maximum Emitter Cut-Off Current - (nA) | Maximum Collector Base Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Operating Temperature - (°C) | Material | Minimum Operating Temperature - (°C) | ROHS | Maximum DC Collector Current - (A) | Pin Count | Maximum Collector Cut-Off Current - (nA) | Maximum Rise Time - (ns) | Life Cycle | Maximum 3rd Order Intercept Point - (dBm) | Minimum DC Current Gain | Minimum DC Current Gain Range | Type | Maximum Noise Figure - (dB) | Maximum Collector-Emitter Voltage - (V) | Typical Output Capacitance - (pF) | Maximum Collector-Emitter Voltage Range - (V) | Maximum Transition Frequency - (MHz) | Packaging | Typical Power Gain - (dB) | Output Power - (W) | Operational Bias Conditions |
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Fiche technique pour 4 produits: Afficher
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Afficher la fiche technique |
Divers
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NTE Electronics | GP BJT | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | Divers | ||||||||||||||
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NTE159-10
Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)
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NTE Electronics | GP BJT | Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) | ||||||||||||||||||||||||||||||||||||||||||
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NTE159MCP
Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92
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NTE Electronics | GP BJT | Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92 | 0.15@15mA@150mA|0.5@50mA@500mA | Bipolar Small Signal | Single | 0.5 to 2 | 1 | TO-92 | TO | 625 | Si | Yes | 0.8 | 3 | Obsolete | 25@100uA@10V|40@1mA@10V|50@10mA@10V|40@100mA@10V|30@500mA@10V | 2 to 30|30 to 50|50 to 120 | PNP | 80 | 70 to 100 | ||||||||||||||||||||||||
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NTE159
Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92
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NTE Electronics | GP BJT | Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92 | 0.15@15mA@150mA|0.5@50mA@500mA | 83.3 | Bipolar Small Signal | Single | 0.5 to 2 | 1 | TO-92 | 200 | 110(Max) | TO | 100 | 625 | 400 | 100 | Si | Yes | 0.8 | 3 | 50 | Obsolete | 25@100uA@10V|40@1mA@10V|50@10mA@10V|40@100mA@10V|30@500mA@10V | 2 to 30|30 to 50|50 to 120 | PNP | 3 | 80 | 30(Max) | 70 to 100 | |||||||||||||||
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NTE159-5
Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92
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NTE Electronics | GP BJT | Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92 |