CoolSiC™ .XT相互接続技術を搭載した1200V SiCトレンチMOSFETデータシート

Infineonの新しいCoolSiC™ MOSFETは、スイッチング損失が非常に低く、短絡耐性時間がわずか3 µsで、.XT相互接続テクノロジーによりクラス最高の熱性能を実現します。

機能、利点、潜在的な用途、詳細な製品仕様など、Infineonの新しいIMBG120R030M1H CoolSiC 1200V SiCトレンチMOSFETのすべてをご覧ください。  ™

今すぐ読む

最新ニュース

申し訳ございませんが、フィルター選択では結果が返されませんでした。

We've updated our privacy policy. Please take a moment to review these changes. By clicking I Agree to Arrow Electronics Terms Of Use  and have read and understand the Privacy Policy and Cookie Policy.

Our website places cookies on your device to improve your experience and to improve our site. Read more about the cookies we use and how to disable them here. Cookies and tracking technologies may be used for marketing purposes.
By clicking “Accept”, you are consenting to placement of cookies on your device and to our use of tracking technologies. Click “Read More” below for more information and instructions on how to disable cookies and tracking technologies. While acceptance of cookies and tracking technologies is voluntary, disabling them may result in the website not working properly, and certain advertisements may be less relevant to you.
We respect your privacy. Read our privacy policy here