Efficient AC/DC power supplies are core to the performance of rapidly evolving telecom and datacom infrastructure. However, currently available silicon MOSFETS have reached their theoretical limits of power delivery. In this article, learn about how new Gallium Nitride (GaN) technology from Analog Devices is helping hardware designers build what’s next.
Gallium nitride transistors offer increased energy conversion efficiency and enable greater density as well. They can switch much faster than their predecessor silicon MOSFETS because they offer:
● Lower gate capacitance and output capacitance.
● Lower drain-source on resistor (RDS(ON)) for higher current operation, resulting in lower conduction losses.
● Low or zero reverse-recovery charge (QRR), as there is no need for a body diode.
An emerging trend in the world of GaN modules is the bundling of the module with an isolation barrier driver. The main benefit to this evolution is faster switching performance due to the reduction of inductor parasitics. A good example of an integrated module + driver bundle is the ADuM110N, which features low propagation delay and high frequency.
In conclusion, GaN transistors offer smaller sizes, lower resistance, and higher working frequency than previous generations of power supply technology. New developments, such as iCoupler® from Analog Devices, is helping to bring the benefits of GaN to medium and high voltage power supplies.
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