Infineon Technologies AG Transistores FET
34 Infineon Technologies AG Transistores FET
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| Nº de referencia | Precio | Existencias | Fabricante | Categoría | Material | Channel Type | Configuration | Channel Mode | Number of Elements per Chip | Maximum Gate Source Voltage - (V) | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain Source Resistance - (Ohm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IGLR60R260D1XUMA1
Trans JFET N-CH 600V 10.4A GaN 8-Pin TSON EP T/R
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Infineon Technologies AG | JFETs | 8 | TSON EP | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||
IGO60R070D1AUMA1
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
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Infineon Technologies AG | JFETs | GaN | N | Single Hex Drain Seven Source Dual Gate | -10(Min) | 600 | 31000 | 125000 | Tape and Reel | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
IGT40R070D1E8220ATMA1
Trans JFET N-CH 400V 31A GaN 9-Pin(8+Tab) HSOF T/R
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Infineon Technologies AG | JFETs | GaN | N | Single Seven Source | -10(Min) | 400 | 31000 | 125000 | 0.07 | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||
PTFA220041MV4XUMA1
Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R
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Infineon Technologies AG | RF MOSFETs | N | Single | Enhancement | 1 | 12 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 4 | 19 | 700 | 2200 | 2010(Typ)@10V | LDMOS | Tape and Reel | 10 | SON EP | SON | No | No | No | No | No | 5A991 | No | ||||||||
PTFA220121MV4XUMA1
Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R
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Infineon Technologies AG | RF MOSFETs | N | Single | Enhancement | 1 | 12 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 20.5 | 700 | 2200 | 2010(Typ)@10V | LDMOS | Tape and Reel | 10 | SON EP | SON | No | No | No | No | No | EAR99 | No | ||||||||
PTFB193404FV1R0XTMA1
Trans RF MOSFET N-CH 65V 7-Pin Case 37275 T/R
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Infineon Technologies AG | RF MOSFETs | N | Dual Common Source | Enhancement | 2 | 10 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone | 65 | 100 | 19 | 1930 | 1990 | 50(Typ)@10V | LDMOS | Tape and Reel | 7 | Case 37275 | No | No | No | No | No | EAR99 | No | |||||||||
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PTFC270051MV2R1KXUMA1
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 -2700 MHz
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Infineon Technologies AG | RF MOSFETs | Tape and Reel | 10 | SON EP | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||
PTFB210801FAV1R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 37265 T/R
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Infineon Technologies AG | RF MOSFETs | N | Single | Enhancement | 1 | 10 | 2-Carrier W-CDMA | 65 | 25 | 18.5 | 2110 | 2170 | 50(Typ)@10V | LDMOS | Tape and Reel | 3 | Case 37265 | Yes | No | No | No | No | EAR99 | No | |||||||||
| PTVA120251EAV1R250XTMA1 Trans RF MOSFET N-CH 105V 3-Pin Case 36265 T/R |
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Infineon Technologies AG | RF MOSFETs | N | Single | Enhancement | 1 | 12 | Pulsed RF | 105 | 25 | 17 | 1200 | 1400 | 1400(Typ)@10V | LDMOS | Tape and Reel | 3 | Case 36265 | No | No | No | No | No | EAR99 | No |