CRD-5FF0912P, SiC MOSFET High-Frequency Evaluation Board for 7L D2PAK
Diseño de referencia usando la pieza 1ED020I12F2XUMA1 de WOLFSPEED, INC
Para productos finales
- Power Supplies
Descripción
- CRD-5FF0912P, Evaluation Board is to demonstrate the high-switching performance of 3 rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a 7L D2PAK package. The new surface-mount device (SMD), specifically designed for high voltage MOSFETs, has a small footprint with a wide creepage distance of 7mm between drain and source. The new package also includes a separate driver source connection, which reduces gate ringing and provides clean gate signals. The board can easily be configured into common power conversion topologies such as synchronous boost, synchronous buck, Inverter, and other topologies
Características clave
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Conversion TypeDC to DC
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TopologyHalf-Bridge
Piezas destacadas (4)
Número de pieza | Fabricante | Tipo | Descripción | |||
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MEJ2D1209SC | Murata Manufacturing | DC to DC Converter and Switching Regulator Module | Module DC-DC 12VIN 2-OUT 9V/-9V 0.111A/-0.111A 2W 5-Pin SIP | AÑADIR AL CARRITO | |
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SN74LVC1G04DBVR | Texas Instruments | Inverters and Schmitt Triggers | Inverter 1-Element CMOS 5-Pin SOT-23 T/R | AÑADIR AL CARRITO | |
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MC7805CD2TR4G | onsemi | Linear Regulators | Standard Regulator Pos 5V 1A 3-Pin(2+Tab) D2PAK T/R | AÑADIR AL CARRITO | |
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1ED020I12F2XUMA1 | Infineon Technologies AG | Gate and Power Drivers | Driver 2A 1-OUT High Side Inv/Non-Inv 16-Pin DSO T/R | AÑADIR AL CARRITO |