CRD-5FF0912P, SiC MOSFET High-Frequency Evaluation Board for 7L D2PAK
Using Part
Vignette
1 / 3
Pour les produits finaux
- Power Supplies
Description
- CRD-5FF0912P, Evaluation Board is to demonstrate the high-switching performance of 3 rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a 7L D2PAK package. The new surface-mount device (SMD), specifically designed for high voltage MOSFETs, has a small footprint with a wide creepage distance of 7mm between drain and source. The new package also includes a separate driver source connection, which reduces gate ringing and provides clean gate signals. The board can easily be configured into common power conversion topologies such as synchronous boost, synchronous buck, Inverter, and other topologies
Caractéristiques principales
-
Conversion TypeDC to DC
-
TopologyHalf-Bridge
Pièces en vedette (4)
Pièce numéro | Fabricant | Type | Description | |||
---|---|---|---|---|---|---|
|
MEJ2D1209SC | Murata Manufacturing | DC to DC Converter and Switching Regulator Module | Module DC-DC 12VIN 2-OUT 9V/-9V 0.111A/-0.111A 2W 5-Pin SIP | Ajouter au panier | |
|
SN74LVC1G04DBVR | Texas Instruments | Inverters and Schmitt Triggers | Inverter 1-Element CMOS 5-Pin SOT-23 T/R | Ajouter au panier | |
|
MC7805CD2TR4G | onsemi | Linear Regulators | Standard Regulator Pos 5V 1A 3-Pin(2+Tab) D2PAK T/R | Ajouter au panier | |
|
1ED020I12F2XUMA1 | Infineon Technologies AG | Gate and Power Drivers | Driver 2A 1-OUT High Side Inv/Non-Inv 16-Pin DSO T/R | Ajouter au panier |