N. parte | Prezzo | Scorte | Produttore | Categoria | Per contattare il Servizio Clienti. | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Maximum Gate Threshold Voltage - (V) | Typical Fall Time - (ns) | Supplier Package | Tradename | Typical Rise Time - (ns) | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Channel Type | Maximum Drain Source Resistance - (mOhm) | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Maximum Gate Source Voltage - (V) | Pin Count | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Scheda tecnica per 2 prodotti: Visualizza
|
Visualizza schede tecniche |
Varie
|
WOLFSPEED, INC | Varie | Power MOSFET | Single | 1 | Enhancement | Varie | 20 to 50 | 1200 | 71@20V | N | 98@20V | 36 | SiC | Varie | 25 | Varie | Varie | 1130@1000V | |||||||||||||||||||
CPM2-1200-0080A
Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin Die
|
|
WOLFSPEED, INC | Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin Die | Power MOSFET | Single | 1 | Enhancement | Die | 20 to 50 | 1200 | 71@20V | N | 98@20V | 36 | SiC | Yes | 25 | 3 | NRND | 1130@1000V | ||||||||||||||||||||
CPM2-1200-0080A-FE6 Trans MOSFET N-CH SiC 1.2KV 36A |
|
WOLFSPEED, INC | Trans MOSFET N-CH SiC 1.2KV 36A | Power MOSFET | Single | 1 | Enhancement | 20 to 50 | 1200 | 71@20V | N | 98@20V | 36 | SiC | 25 | 1130@1000V |