N. parte | Prezzo | Scorte | Produttore | Categoria | Per contattare il Servizio Clienti. | Maximum Power Dissipation - (W) | Configuration | Maximum Operating Temperature - (°C) | Typical Collector Emitter Saturation Voltage - (V) | Maximum Continuous Collector Current Range - (A) | Minimum Operating Temperature - (°C) | Maximum Continuous Collector Current - (A) | ROHS | Pin Count | Supplier Package | Tradename | Life Cycle | Maximum Gate Emitter Leakage Current - (uA) | Maximum Collector-Emitter Voltage - (V) | Technology | Typical Output Capacitance - (pF) | Channel Type | Packaging | Typical Input Capacitance - (pF) | Maximum Gate Emitter Voltage - (V) | Package Family Name |
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Scheda tecnica per 3 prodotti: Visualizza
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Visualizza schede tecniche |
Varie
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Infineon Technologies AG | moduli IGBT | Varie | Varie | Varie | Varie | Varie | Varie | Varie | Varie | Varie | Varie | Varie | Varie | Varie | |||||||||
FZ1800R12HE4B9HOSA1
Trans IGBT Module N-CH 1200V 2.735KA 11000W 9-Pin AG-IHMB190-2 Tray
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Infineon Technologies AG | moduli IGBT | Trans IGBT Module N-CH 1200V 2.735KA 11000W 9-Pin AG-IHMB190-2 Tray | ||||||||||||||||||||||
FZ1800R12HE4B9NPSA1
Trans IGBT Module N-CH 1200V 2.735KA 11000W 9-Pin IHMB190-2 Tray
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Infineon Technologies AG | moduli IGBT | Trans IGBT Module N-CH 1200V 2.735KA 11000W 9-Pin IHMB190-2 Tray | ||||||||||||||||||||||
FZ1800R12HE4B9HOSA2
Trans IGBT Module N-CH 1200V 2.735KA 11000W 9-Pin IHMB190-2 Tray
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Infineon Technologies AG | moduli IGBT | Trans IGBT Module N-CH 1200V 2.735KA 11000W 9-Pin IHMB190-2 Tray | 11000 | Triple | Yes | 9 | IHMB190-2 | Active | 0.4 | 1200 | Field Stop|Trench | N | Tray | ±20 |