BFP650F RF Transistor in High Linearity 2.4-GHz Low Noise Amplifier (LNA) Application
使用 Infineon Technologies AG 的 BFP650F 的参考设计
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依据最终产品
- PoE Wireless Access Point
说明
- BFP650F RF Transistor in High Linearity 2.4-GHz Low Noise Amplifier (LNA) Application. Silicon-Germanium BFP650F RF Transistor in TSFP-4 package is shown in a high-linearity 2.4 GHz LNA design. Amplifier draws 19.7 mA from +3.3V supply. +5V power supply can be used if bias resistor values are changed
主要特色
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Operating Frequency2400 to 2483.5 MHz
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Output Power30.7 dBm
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Gain8 to 14 dB
Featured Parts (2)
零件编号 | 供应商 | 类别 | 说明 | |||
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BFP650FH6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.15A 500mW Automotive AEC-Q101 4-Pin TSFP T/R | 买入 | |
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BFP 650F H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.15A 500mW Automotive AEC-Q101 4-Pin TSFP T/R | 买入 |