BFP650F RF Transistor in High Linearity 2.4-GHz Low Noise Amplifier (LNA) Application
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- PoE Wireless Access Point
Description
- BFP650F RF Transistor in High Linearity 2.4-GHz Low Noise Amplifier (LNA) Application. Silicon-Germanium BFP650F RF Transistor in TSFP-4 package is shown in a high-linearity 2.4 GHz LNA design. Amplifier draws 19.7 mA from +3.3V supply. +5V power supply can be used if bias resistor values are changed
Caractéristiques principales
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Operating Frequency2400 to 2483.5 MHz
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Output Power30.7 dBm
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Gain8 to 14 dB
Pièces en vedette (2)
Pièce numéro | Fabricant | Type | Description | |||
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BFP650FH6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.15A 500mW Automotive AEC-Q101 4-Pin TSFP T/R | Ajouter au panier | |
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BFP 650F H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.15A 500mW Automotive AEC-Q101 4-Pin TSFP T/R | Ajouter au panier |