Low-Cost Two-Stage Low Noise Amplifier for 5 - 6GHz Applications Using the Silicon-Germanium BFP640 Transistor
Using Part
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Pour les produits finaux
- Cordless Phone
- Wireless LAN
Description
- Low-Cost Two-Stage Low Noise Amplifier for 5 - 6GHz Applications Using the BFP640 Silicon Germanium RF Transistor is shown in a two-stage Low Noise Amplifier (LNA) application targeted for Wireless LAN and other systems using the frequency range from 5 to 6 GHz
Caractéristiques principales
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Operating Frequency5000 to 6000 MHz
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Gain23.5 dB
Pièces en vedette (2)
Pièce numéro | Fabricant | Type | Description | |||
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BFP640H6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4.1V 0.05A 200mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101 | Ajouter au panier | |
|
BFP 640 H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | Ajouter au panier |