IGBTs are usually used in high power inverters and converter circuits, and require significant isolated gate drive power to achieve optimal switching. The gate drive of silicon, silicon carbide (SiC), and gallium nitride (GaN) MOSFET, also has similar requirements. This text will introduce the performance characteristics of small isolated DC-DC converters matching IGBT/MOSFET launched by Murata Power Solutions for you.
Multiple voltage and package specifications to satisfy various application requirements
IGBT/MOSFET drivers have a quite broad market and applications such as Uninterrupted Power System (UPS), hybrid power electric vehicles/electric vehicles (HEV/EV), electrical motors/motion control, and power grids (like power substations, solar energy, and wind power generation). In the aspect of medical treatment, they are commonly used in X-ray machines, computerized tomography (CT), magnetic resonance imaging (MRI), ultrasonic wave machines, defibrillators, etc. They also have a wide market in fields like railways and industrial engineering (such as textile and rolling mills, electric arc welders and tube welding machines, drilling machines and milling machines, industrial boilers and drying machines, etc).
The applications above usually require higher power. Inverters or converters normally use “bridge” configurations to generate line frequency alternating current, or provide a bi-directional PWM drive for motors, transformers, and other loads. Bridge circuits generally include IGBT or a silicon carbide (SiC) and gallium nitride (GaN) MOSFET as the “high side” switch, in which the emitter/source electrode is the switching nodes under high voltage and high frequency. Therefore, gate drive PWM signals using emitter/source electrodes as the reference and relevant driving power rails must conduct electric isolation from the ground. The additional requirement is that drive circuits and relevant power rails should be immune to high “dV/dt” of the switching node with very low coupling capacitance. In many cases, the bridge circuit needs to conduct safety agency-rated isolation from the control circuit. Thus, the insulated gate of drive circuits must be robust and durable without any obvious degradation due to a partial discharge effect during the designed life.
In order to solve these problems, Murata Power Solutions launches the MGJ series DC-DC converter to provide the optimal driving voltage and isolation for these “high side” gate drive circuits. The MGJ series DC-DC converter is very suitable for the power supply of “high side” and “low side” gate drive circuits for IGBTs and silicon carbide and gallium nitride MOSFETs in bridge circuits. It chooses asymmetric output voltage to achieve the optimal drive level, as well as the optimal system efficiency and EMI. The MGJ series converter provides various versions such as 1W, 2W, 3W, and 6W to satisfy different customer requirements, and has an industrial grade temperature rating and construction for providing a longer service life and higher reliability.
Being a 5.7kVDC isolated 1W SM gate drive DC-DC converter, the MGJ1 series has a rather high isolation requirement, which is usually used in the bridge circuits of motor drivers and inverters. The MGJ2 series is a 5.2kVDC isolated 2W SM gate drive DC-DC converter which has a very high isolation and dV/dt requirement. With the isolation testing voltage of 5.2 kVDC and the internationally recognized safety standard UL60950, it has become the key component of the final product safety isolation system.
The MGJ3 series is a 5.2kVDC isolated 3W SM gate drive SM DC-DC converter which provides a configurable dual output voltage like +15V/-10V, +20V/-5V and +15V/-5V. Its disable/frequency synchronism pin simplifies EMC filter design and supports functions like short-circuit protection and overload protection, etc. It can be operated in a broad temperature range from -40 to +105℃, which guarantees durable operation under the circumstance of system failure.
The MGJ6 has multiple subordinate product series, among which the MGJ 14mm series is a 10.2kVDC isolated 6W SM gate drive SM DC-DC converter with a 14mm creepage and electric clearance distance, as well as a 690VAC reinforced insulation rating that is very suitable for 690VAC industrial electrical distribution systems with higher efficiency. The MGJ6D is a 5.7kVDC isolated 6W SM gate drive SM DC-DC converter which provides +18V/-2.5V dual output voltage for Rohm devices and +15V/-4V dual output voltage for Wolfspeed devices.
The MGJ6 three phase bridge series is a 5.7kVDC 6W quad output isolation gate drive SM DC-DC converter which can provide four 24V isolated output voltages and is suitable for three phase circuits. The MGJ6 full bridge series is a 5.7kVDC isolated 6W triple output gate drive SM DC-DC converter which can provide three 24V isolated output voltages and is suitable for full bridge circuits. The MGJ6 half bridge series is a 5.7kVDC isolated 6W dual output gate drive SM DC-DC converter which can provide two configurable 24V isolated output voltages and is suitable for half bridge circuits.
In addition, Murata has also launched the MGJ6 Low Profile series which is a 5.7kVDC isolated 6W gate drive SM DC-DC converter adopting the Low Profile package format, and the MGJ6 SIP/DIP series which is a 5.7kVDC isolated 6W gate drive SIP/DIP DC-DC converter supporting the SIP/DIP package format.
The MGJ series DC-DC converter launched by Murata Power Solutions supports multiple specifications like voltage grade, power, phase, and package size, etc, to satisfy various application requirements, which is the best partner for IGBTs and silicon carbide (SiC) and gallium nitride (GaN) MOSFETs.
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