Renesas Electronics America Inc BJT RF
| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Configuration | Number of Elements per Chip | Maximum Collector Base Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Emitter Base Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Minimum DC Current Gain | Minimum DC Current Gain Range | Maximum Junction Ambient Thermal Resistance | Typical Input Capacitance - (pF) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Packaging | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
HFA3134IHZ96
Trans RF BJT NPN 11V 0.026A 6-Pin SOT-23 T/R
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Intersil | RF BJT | NPN | Dual | 2 | 12 | 11 | 4.5 | 0.026 | 48@0.1mA@2V|48@0.1mA@5V|48@10mA@2V|48@10mA@5V|48@1mA@2V|48@1mA@5V | 30 to 50 | 350°C/W | 0.6 | 0.25@1mA@10mA | 0.5 | 8500(Typ) | 2.6(Typ) | Tape and Reel | No | No | EAR99 | Yes | No | |||
HFA3101BZ
Trans RF BJT NPN 8V 0.03A 8-Pin SOIC N
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Scorte
152
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Intersil | RF BJT | NPN | Hex | 6 | 12 | 8 | 5.5 | 0.03 | 3V/5mA | 40@10mA@3V | 30 to 50 | 185°C/W | 0.2@Q 1|0.2@Q 2|0.2@Q 3|0.2@Q 4|0.4@Q 5|0.4@Q 6 | 0.3@Q 1|0.3@Q 2|0.3@Q 3|0.3@Q 4|0.6@Q 5|0.6@Q 6 | 17.5@Q 5|17.5@Q 6 | 10000(Typ) | 1.7(Min)|2(Min)@Q 5|2(Min)@Q 6 | No | No | EAR99 | Yes | No |